Abstract
Copper antimony sulfide (CuSbS2) thin films were fabricated by sulfurization of an electrodeposited metallic stack composed of Cu and Sb on a Mo-coated glass (Mo/glass) substrate. A CuSbS2 film containing appreciable impurity components was obtained when the precursor metallic stack was heated monotonically from room temperature to 450°C in Ar followed by sulfurization. The film also showed poor adherence due to a large number of crevices; there were many appreciable pinholes over the entire surface of the film. On the other hand, a CuSbS2 film without any impurity phases was obtained when the metallic precursor film was pretreated at 510°C in Ar for 60min just before sulfurization at 450°C. It was also observed that the thus-obtained CuSbS2 film showed good adhesion to the Mo/glass substrate and almost no notable pinholes. As expected from structural analyses, the 510°C-pretreated film worked as a relatively efficient absorber for the thin film solar cell with an Al:ZnO/CdS/CuSbS2/Mo/glass structure: it gave preliminary conversion efficiency of 3.1%.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.