Abstract
Methods for depth profiling layered structures in the 10–100 nm range via ion beam analysis, such as Rutherford backscattering spectrometry, channeling, nuclear reaction analysis and elastic recoil detection analysis, are described in connection with ion-beam synthesized silicides (β-FeSi 2, TaSi 2) and epitaxial regrowth of amorphous SiO 2. Methods using implanted radioactive marker isotopes in nanometer thin films, such as perturbed angular correlation spectroscopy, will be sketched.
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