Abstract
Investigation of semiconductor/electrolyte interface modified by superficial oxides has been performed with photocurrent transients and surface analysis. Studies of the photocurrent transients before and after the modification of the semiconductor surface exhibit the electrical properties of the interface, whereas XPS analysis gives access to the chemical aspect. This work evidenced a correlation between the level of photocurrent, the surface oxidation and the texture (porosity, thickness) of the oxide layer.
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