Abstract
AlAsSb avalanche regions of less than 100nm thick exhibit temperature coefficients of breakdown voltage of 0.95 mV/K and excess noise corresponding to effective ionization coefficient ratio of k <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> ~0.1 to 0.15.
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