Abstract
Abstract Microwave surface resistance and critical current density are measured in Ag-doped YBa 2 Cu 3 O 7− x thin films as a function of thickness of the film. The microwave surface resistance decreases monotonically as the thickness of the film is increased to an optimum thickness of 3000 A. Beyond this optimum thickness the microstructure of the film deteriorates and the surface resistance increases as the thickness is further increased. Critical current density also increases as the thickness of the film is increased to the optimum thickness. The decrease in the value of surface resistance and an enhancement of J c up to optimum thickness has been explained in terms of defects formed in the films during growth.
Published Version
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