Abstract
An experimental study aiming at the realisation of thick (/spl sim/0.5 /spl mu/m) poly-Si films by means of the aluminium-induced crystallisation (AlC) process has been performed. A gradient in the Al evaporation rate and a high annealing temperature have been found to be important for thick poly-Si films fabricated by the AlC exchange layer process. Furthermore, to obtain a thick poly-Si film free of pinholes, a low plasma power or a high Ar gas pressure must be used in the sputtering of the a-Si layer in the AlC process. We have realised continuous poly-Si films with a thickness of up to 1 /spl mu/m. Thicker films (up to 2 /spl mu/m) have also been produced, although they exhibit some pinholes or voids. A dependence of (thin and thick) poly-Si film properties on the a-Si deposition parameters used in the AlC process has been identified, although further investigation is required.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call