Abstract
The results for the sintering of Bi4Ti3O12 (BIT)-doped BaTi0.85Zr0.15O3 (BTZ) thick films, deposited by electro- phoresis, using as heating source a CO2 laser are presented. The thermal process associated to the laser scanning sintering (LSS) acted in a similar way as a two-step-sintering process. This characteristic together with the high heating rate al- lowed us to obtain thick films with an average grain size of 200 nm, high relative density (~96%) and with a homogene- ous microstructure. The X ray diffraction profile analysis show evidences for Bi 3+ replacing Ba 2+ at the A sites.
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