Thermoemission-Based Model of THz Detection and Its Validation—JLFET Case Studies

Abstract

Silicon junctionless field-effect transistors (JLFETs) detect THz radiation even at frequencies above a few THz. This effect cannot be explained by classic laws of electron transport. The same behavior is observed for other types of FETs. However, the JLFET architecture makes this device an effective tool for testing the THz detection mechanism. In particular, a deeper insight into this effect is provided by a case study in which, the low concentration of electrons in the gate-controlled region contradicts potential plasmonic effects. Considering the experimental results, the authors critically discuss the plasmon-based theory of THz detection by JLFETs. Then, taking into account the revealed inconsistencies and based on numerical simulation results, they propose a simple, one-dimensional JLFET photoresponse model based on local electron heating at the channel–source contact which is located in the path of the THz signal between the gate and the source. The model is verified in a simulation-assisted experiment showing that the energy of hot electrons generates a sufficient photoelectric voltage, typical of silicon FETs integrated with antennas illuminated by THz radiation. The authors suggest that the model is universal and in the three-dimensional version it can successfully explain the THz detection by various FETs, especially those operating in the subthreshold range in which the electron concentration under the gate is very low.