Abstract
Low temperature (<400 K) thermoelectric properties of semiconducting RuIn3 and metallic IrIn3 are reported. RuIn3 is a narrow band gap semiconductor with a large n-type Seebeck coefficient at room temperature (S(290K)≈−400μV/K), but the thermoelectric figure of merit (ZT(290K)≈0.007) is small because of high electrical resistivity and thermal conductivity (κ(290 K) ∼ 2.0 W/m K). IrIn3 is a metal (n(290K)≈1021cm−3) with low thermopower at room temperature (S(290K)≈−20μV/K). Iridium substitution on the ruthenium site has a dramatic effect on transport properties, which leads to a large improvement in the power factor (S2ρ(390K)∼−207μWm K2) and corresponding figure of merit (ZT(380 K) = 0.053), improving the efficiency of the material by almost an order of magnitude.
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