Abstract
Equilibrium calculations were performed for the Si‐H‐Cl and Si‐H‐Br systems. Gibb's free energy of formation data from the JANAF tables were used for all species, with the exception of that for . Three conditions of interest to the electronics industry were examined: epitaxial silicon deposition, polysilicon deposition, and conversion of to. Calculated results are presented graphically: partial pressures as a function of temperature; and silicon content of the gas phase as a function of initial starting concentrations. For the Si‐H‐Cl system, higher gas phase concentrations of silicon‐containing species, and consequently, lower yields of deposited silicon were observed compared to past results. There is considerable similarity between the Si‐H‐Br and Si‐H‐Cl systems. This similarity is predicted to be greater if standard enthalpy of formation data were known more accurately for and .
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