Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial silicon deposition. I. Process considerations

Abstract

A low-energy argon sputter process has been optimized to successfully remove native oxide from a silicon surface at elevated temperatures without introducing permanent damage. The process relies upon confining all sputtering events to the near-surface region of the silicon and exploits the enhancement of sputter efficiencies observed for silicon and silicon dioxide above 600 °C. The procedure has been implemented as an in situ etch for low-temperature (below 800 °C), very low-pressure (1–10 mTorr), epitaxial silicon deposition in a high vacuum ambient. The reactor and conditions employed are presented along with measures of residual substrate damage as a function of processing conditions, and the process limitations are discussed. A companion paper describes the excellent structural quality of the resultant epitaxial films. The ion energies (100 eV) and fluxes (5×1013 cm−2 s−1) employed represent a significant departure from conventional sputter cleaning processes.