Abstract
A spontaneous polysilicon and epitaxial silicon deposition (SPED) process for fabricating high performance submicron devices was developed using as a silicon source gas under low pressure and temperature. SPED was achieved at 8000 Pa and 830°C, even for a 0.2 μm thick film on a substrate with a 0.5 μm step. The defect density of the epilayer was less than 0.3/cm2. This SPED layer did not have facets at the transition region.
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