Abstract
An analysis of element incorporation from a thermodynamic viewpointis described for the vapour-phase epitaxy (metal-organicvapour-phase epitaxy (MOVPE), hydride (or halide) vapour-phaseepitaxy (HVPE) and molecular beam epitaxy (MBE)) of group IIInitrides. The driving force of binary nitrides and thevapour-solid distribution relationship for ternary and quaternarynitrides are discussed. It is shown that the growth rate and alloycomposition of group III nitrides are thermodynamically controlled.The thermodynamically predicted orders in which binary nitridesincorporate into alloys are very similar for all epitaxial methodsand the order is basically governed by the Gibbs free energy offormation of the binary nitrides irrespective of the growth method.
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