Abstract
The thermo-optic coefficient of tin-oxide thin films on silicon substrates was measured using fixed wavelength ellipsometry. The applicability of ellipsometry for these measurements is discussed with special considerations to the problem of measurement of the thermo-optic coefficient of materials with very low values of the thermo-optic coefficient (<2 × 10−5). The effect of thermal annealing on the thermo-optic coefficient and on the film-substrate boundary properties of the tin oxide film is also discussed.
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