Abstract
The effect of rapid thermal annealing on structural and electrical properties of high k HfO2 thin films is investigated. The films were initially deposited at pre-optimized sputtering voltage of 0.8 kV and substrate bias of 80 V in order to get optimized results for oxide charges and leakage current as a MOS device. The film properties were investigated for optimum annealing temperature in oxygen and optimum rapid thermal annealing temperature in nitrogen respectively to get the best electrical results as a MOS device structure. The film thickness, composition and microstructure is studied by Laser Ellipsometry, XRD and AFM and the effect of thermal annealing is shown. The electrical I–V and C–V characteristics of the annealed dielectric film were investigated employing Al-HfO2-Si MOS capacitor structure. The flat-band voltage (Vfb) and oxide-charge density (Qox) were extracted from the high-frequency C–V curve. Dielectric study were further carried out on HfO2 thin films having metal–insulator–metal (MIM) configuration over a wide temperature (300–500 K) and frequency (100 Hz to 1 MHz) range.
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