Abstract
The thermal formation of silicide was observed on Ru -deposited Si(001) surfaces at monolayer scale. Rectangular Ru–Si islands, composed of metastable Ru -rich granular phase, were formed at the early stage of growth. The shape and size of the islands were strongly influenced by the orientation of Si(001) , and did not change until the density of the nearby steps became sufficiently high. In the late stage of growth, incorporation of Si into the islands starts, and at the same time the frequent attack of Si detached from the terrace results in formation of step bunches on the terrace.
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