Abstract
Interfacial phase change memory (iPCM) devices have been shown to switch with significantly reduced power consumption, compared with conventional phase-change memory devices. These iPCMs are based on a periodic structure of nanometer-sized layers of chalcogenides called a chalcogenide superlattice (CSL). Strong temperature increases have been observed within the CSL during the switching procedure, questioning the stability of the CSL structure. In this study, we conduct a detailed quantitative analysis to investigate the evolution of the structure and composition of the sputter-deposited GeTe-Sb2Te3 CSL upon a temperature increase using atom probe tomography. We find that GeTe-Sb2Te3 CSLs already feature significant interdiffusion during the synthesis, with a considerable fraction of Sb found in GeTe and Ge in Sb2Te3. Upon heating the atoms rearrange considerably and form layers of stable Ge2Sb2Te5 and Ge3Sb2Te6 phases, which can be described as a layered solid of GeTe and Sb2Te3 blocks, i.e., Ge2Sb2Te5 = 2 × GeTe + Sb2Te3, while Ge3Sb2Te6 = 3 × GeTe + Sb2Te3. Moreover, these layered solids form in such a way as to preserve and maximize the number of van der Waals (vdW)-like contacts. Interestingly, our electrothermal simulations indicate that the transformation of the original CSL structure into layered stacks of Ge2Sb2Te5 and Ge3Sb2Te6 will have a beneficial effect on device performance. Finally, we discuss the mechanism behind the interdiffusion and phase formation and its implications for iPCM devices. In doing so, the applicability of atom probe tomography to directly investigate intermixing and phase formation on the nanoscale in phase change and related memory devices is demonstrated.
Published Version
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