Transient effects of delay, switching and recovery in phase change memory (PCM) devices

S Lavizzari,D Sharma,A.L Lacaita,D Ielmini

doi:10.1109/iedm.2008.4796655

Transient effects of delay, switching and recovery in phase change memory (PCM) devices

S Lavizzari, D Sharma + Show 2 more

https://doi.org/10.1109/iedm.2008.4796655

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Publication Date: Dec 1, 2008

Citations: 26

Affiliation: Politecnico di Milano, Istituto di Fotonica e Nanotecnologie

#Phase Change Memory Devices #Phase Change Memory + Show 8 more

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Abstract

Threshold switching effects play a critical role in phase change memory (PCM) devices, since they contribute to the programming (set/reset) times and may lead to unwanted disturbs during the read operation. This work presents a detailed characterization and modeling of transient effects of delay, switching and recovery in PCM devices, allowing to quantitatively evaluate the statistical impact of read disturb and the ultimate speed limitations to set/reset and program/verify loops.

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