Abstract
Stacking faults in SiC are one of the important factors in treat SiC, since they affect physical and chemical properties. Ultra-pure β-SiC specimens with stacking faults were annealed at various temperatures for various duration in an Ar atmosphere under a condition without grain growth. Stacking faults decreased in two steps by heat treatment characterized by fast decrease and by slow decrease, respectively. The apparent activation energy for the former was estimated to be 182kJ/mol and that for the latter was estimated to be 260kJ/mol. The value of the latter corresponded to the activation energy for migration of carbon atoms in β-SiC. It was also observed that lattice strain decreased with decreasing stacking faults.
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