Abstract
Thermally evaporated ITO/n-GaAs contacts with and without sulfur passivation are studied. It is determined that passivation improves the thermal stability (up to 700 °C annealing temperature) of contacts. This improvement is due to formation of thermally stable S-S, S-As, and S-Ga bonds at GaAs surface layer.
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Schedule a callMore From: Physica Status Solidi A-applications and Materials Science
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