Abstract
Effects of sulfur and hydrogen passivation on the thermal stability of RuO2 Schottky contacts on n-type GaAs have been studied by treatments with (NH4)2Sx solution and hydrogen plasma, respectively. The RuO2 thin films were deposited by dc magnetron sputtering using a Ru target and a mixture of argon and oxygen gases. The thermal stability of RuO2 Schottky contacts during thermal annealing in the temperature range from 200 to 550 °C for 10 min was investigated by current-voltage (I–V) measurements and Auger electron spectroscopy. For the sulfur treated sample, the ideality factor was constant at about 1.01 in the whole temperature range and the barrier height of 0.84 eV was maintained up to 350 °C. Hydrogenation treatment, however, was not so effective in preventing the thermal degradation compared to the sulfurization process. It is confirmed that the effective sulfur passivation to enhance the thermal stability of RuO2/GaAs is responsible for the suppression of an oxidation in the interface between GaAs and RuO2.
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