Abstract
Thermal stability of cobalt and nickel silicides on crystalline Si (c-Si) and amorphous Si (a-Si) has been investigated. We have found that CoSi 2 is thermally stable on a-Si and c-Si substrates up to 950°C for 30 min. NiSi is stable and shows low resistivity on c-Si at around 700°C for 30 min, but is unstable on a-Si substrate even after annealing at 400°C.
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