Abstract
Silicides of cobalt and nickel are formed on thin (18–100 nm) polycrystalline silicon films by in situ vacuum annealing. The dependence of silicide sheet resistance on silicon film thickness and crystallinity, surface preparation, integrity of vacuum during metal deposition, and anneal temperature is shown. Cobalt and nickel silicides with sheet resistances as low as 30 and 20 Ω/□ were formed on 18-nm-thick polysilicon films. A surface preparation method to produce a passivated silicon surface compatible with large area glass substrates is demonstrated. The resistance of nickel and cobalt silicide to chemical reagents used in semiconductor processing is studied, as is the thermal stability of these films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
