Reaction of Amorphous Silicon with Cobalt and Nickel Silicides Before Disilicide Formation

Abstract

AbstractA method is introduced to reduce substrate Si consumption of the salicide process by supplying extra Si from an amorphous Si film. Si is introduced into cobalt silicide and nickel silicide at the time when the silicide is converted into the disilicide phase. The reaction rate with amorphous Si is higher than that with single crystal Si if the amorphous Si has a low oxygen content.