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Abstract
The crystallization of thin silicon nitride (Si 3N 4) films deposited on polycrystalline SiC substrates was investigated by X-ray diffractometry as a function of annealing time. The amorphous Si 3N 4 films were produced by means of reactive r.f. magnetron sputtering. Annealing at temperatures between 1300 and 1700 °C led to the formation of crystalline films composed of α-Si 3N 4 and β-Si 3N 4. The fraction of β-Si 3N 4 in the films reaches approximately 40% at temperatures above 1550 °C. Both polymorphic modifications were formed simultaneously during the crystallization process. A transformation of α-Si 3N 4 to β-Si 3N 4 could not be observed in the time and temperature range investigated. The crystallization process of amorphous Si 3N 4 can be described according to the Johnson–Mehl–Avrami–Kolmogorov (JMAK) formalism, assuming a three-dimensional, interface controlled grain growth from pre-existing nuclei. The rate constants show an Arrhenius behaviour with an activation enthalpy of approximately 5.5 eV.
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