Investigation and characterisation of silicon nitride and silicon carbide thin films

Abstract

Thin films of silicon nitride (Si 3N 4) and silicon carbide (SiC) have been deposited by radio frequency (r.f.) magnetron sputtering of stoichiometric targets in non-reactive argon and in the case of Si 3N 4 additionally in reactive nitrogen–argon atmospheres. The influence of the sputtering atmosphere, the substrate temperature and the substrate bias on the composition and on the mechanical and microstructural properties of the thin films was investigated. FTIR and Raman spectroscopy was used to identify the chemical bonding configuration and to control the chemical composition. Raman investigation showed a change in the bonding configuration from amorphous silicon carbide to a crystalline structure and the incorporation of nitrogen in silicon nitride thin films with increasing substrate bias.