Abstract
The green (537 and 558 nm) and near infrared (1.54 μm) photoluminescence (PL) spectra of Er-doped GaN thin films have been investigated as a function of temperature, excitation wavelength, and pump intensity. Thermal quenching measurements showed that the integrated green Er3+ PL intensity (4S3/2/2H11/2→4I15/2) remained nearly constant up to 150 K, but decreased at higher temperatures due to a less efficient Er3+ excitation. The integrated infrared Er3+ PL intensity (4I13/2→4I15/2) was found to be temperature-independent up to 250 K, but decreased slightly at higher temperatures due to the onset of non-radiative decay. Pump intensity PL studies revealed that the above-gap excitation cross-section is more than two orders of magnitude greater than the below-gap excitation cross-section. Within a simplified three-level model, the above-gap excitation cross-section was estimated to be ∼10−16 cm2. This result indicates that Er3+ ions can be excited efficiently through carrier-mediated processes in a forward-biased GaN:Er light emitting device.
Published Version
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