Study of infrared luminescence from Er-implanted GaN films

Abstract

In this study, we report the dependences of infrared luminescence properties of Er-implanted GaN thin films (GaN:Er) on the kinds of substrates used to grow GaN, the growth techniques of GaN, the implantation parameters and annealing procedures. The experimental results showed that the photoluminescence (PL) intensity at 1.54 μm was severely influenced by different kinds of substrates. The integrated PL peak intensity from GaN:Er /Al 2O 3 (0 0 0 1) was three and five times stronger than that from GaN:Er /Si (1 1 1) grown by molecular beam epitaxy (MBE) and by metal-organic chemical vapor deposition (MOCVD), respectively. The PL spectra observed from GaN:Er/Al 2O 3 (0 0 0 1) grown by MOCVD and by MBE displayed a similar feature, but those samples grown by MOCVD exhibited a stronger 1.54 μm PL. It was also found that there was a strong correlation between the PL intensity with ion implantation parameters and annealing procedures. Ion implantation induced damage in host material could be only partly recovered by an appropriate annealing temperature procedure. The thermal quenching of PL from 15 to 300 K was also estimated. In comparison with the integrated PL intensity at 15 K, it is reduced by only about 30% when going up to 300 K for GaN:Er/Al 2O 3 sample grown by MOCVD. Our results also show that the strongest PL intensity comes from GaN:Er grown on Al 2O 3 substrate by MOCVD.