Abstract
Crystal damage, caused by a 1015 11B/cm2 250-keV implant into epitaxial Hg0.64Cd0.36Te layers held at LN2 temperature, has been successfully annealed, as observed by MeV 4He ion channeling and Rutherford backscattering. The anneal consists of a thermal pulse of 250 °C for 8 s in air under a Si proximity cap. Secondary ion mass spectrometry (SIMS) data indicate that the boron did not diffuse during the anneal. An n-p junction was observed at a depth of 5.5 μm by electron beam induced current (EBIC) measurements. A diode fabricated on the layer exhibited a very sharp I-V curve with reverse breakdown occurring at 12 V and an R0A of ⩾107 Ω cm2 at 77 K.
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