Abstract
The thermal spreading resistance and temperature-profile properties of a circular semiconductor device mounted on a composite heat sink are considered theoretically. The results are applied to annular and array-geometry contacts by the principle of superposition. It is found that considerable reductions in thermal resistance can be achieved which are due both to contact geometry, and the composite heat sink. Substantial improvements in the uniformity of the temperature profile in the contact due to the composite nature of the heat sink is also demonstrated and optimum heat sink geometries are illustrated. An annular-geometry structure (inner radius to width ratio of 8) with an area of 3·14 × 10 −4 cm 2 has a predicted thermal resistance of 2·6°C/W and a temperature difference at the interface of only 7·5 per cent, when the main heat sink is copper, the conductivity ratio is 3, and the heat sink geometry is optimum. The results are shown to agree in the special case of a single-medium heat sink with those of Frey. The results are also applicable to the case where interface layers are present in the heat sink with conductivity lower than the main heat sink and in which heat-spreading is not negligible.
Published Version
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