Thermal neutron induced upsets in 28nm SRAM

Abstract

In this work, we present the first results of static tests in a 28nm SRAM under thermal neutron irradiation from the IPEN/IEA-R1 research reactor. The SRAM used was the configuration memory of a Xilinx Zynq-7000 FPGA and the ECC frame was used to detect bit-flips. It was obtained a SEU cross-section of 9.2(21) × 10−16 cm2/bit, corresponding to a FIT/Mb of 12(5), in accordance with expected results. The most probable cause of SEU in this device are 10B contamination on tungsten contacts.