Abstract

Flip chip technology has traditionally been driven by electrical performance and package miniaturization, with application processors being primary drivers for devices like smart-phones and tablets. Today solder interconnect pitches, for both low-end and high-end flip chip applications, approximately range from 200μm to 90μm in area array. Advanced silicon nodes create challenges to fine pitch flip chip interconnects and corresponding substrate technology. Fine pitch (<60μm pitch) flip chip (FPFC) packaging is an emerging technology that meets the demand for both smaller form factors and lower cost products. Copper pillar bumps are best suited for fine pitch applications because they allow low standoff height and robust package reliability. Previous feasibility studies show that thermo-compression bonding process with non-conductive paste (NCP) is well suited for manufacturing copper pillar based FPFC packages because the NCP paste encapsulates the bumps and protects the vulnerable die interconnects. TCNCP process can be described as (1) NCP paste is pre-dispensed on a substrate (2) bumped die is picked up by the heater tool (3) proper heating profile and compression load is applied and (4) heater tool detaches and die is allowed to cool. This process requires precise control of temperature and force to get robust flip chip interconnect shape and void-free NCP coverage. TCNCP process has very small heating times usually ranging between 2 to 4 seconds per die. Within such short time, the heater temperature is quickly ramped up to 3 times its initial temperature to melt the solder at the tip of the copper bumps and cure the NCP. Small package layers make it very difficult for the heat to spread quickly. Therefore any temperature gradients within the heater are propagated into the die. Large temperature gradients within the die can potentially introduce manufacturing related challenges like solder “non-wet” and “de-wet”. In this paper these issues are briefly discussed. An experimentally validated thermal model is presented to develop an understanding of rapid heat flow patterns during a typical TCNCP process. Detailed parametric computational study is performed on different die sizes, heating temperature and time to propose a broad guideline on achieving optimal temperature distribution during the TCNCP process.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call