Abstract
Zinc oxide (ZnO) nanowires were prepared on Si substrates by a thermal evaporation method at different temperatures and <TEX>$O_2$</TEX> pressure. Microstructural analysis of the obtained ZnO nanowires was performed by using transmission electron microscopy(TEM) and scanning electron microscopy(SEM). Phase analysis was done using X-ray diffraction(XRD). As the deposition temperature and oxygen pressure were increased, the diameter and length of ZnO nanowires had a tendency to increase. Based on TEM and XRD analyses, the nanowires are single crystalline in nature and consist of a single phase. According to the measurements, the ZnO nanowires grown at 1100<TEX>$^{\circ}C$</TEX>, Ar 50 sccm, <TEX>$O_2$</TEX> 10 sccm have good properties.
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