Abstract
We report the effects of isothermal annealing on the current component, the paramagnetic K0 centers, and charge accumulation, induced by exposing silicon nitride films and silicon nitride–silicon dioxide double-layer films to 4.9-eV ultraviolet (UV) illumination. The UV-induced current component decayed as a result of the isothermal annealing at temperatures ranging from 27°C to 240°C, and was induced once again by UV exposure following the annealing. The density of the current component showed a close correlation with the density of the K0 centers. Based on detailed analysis, we show that electron–hole pair generation in the bulk of the silicon nitride film is the possible source of the UV-induced current component.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.