Abstract
Dosed on oxidized Si(100) at 100 K, carbon tetrachloride adsorbs and desorbs without dissociation. The monolayer desorbs at 135 K, 10 K lower than the multilayer. This unusual behavior is attributed to stronger interactions between condensed CCl4 molecules than between CCl4 and SiO2. Irradiation with either low-energy (⩽50 eV) electrons or Mg Kα x rays causes C–Cl cleavage. For 50 eV incident electrons, the decay of the CCl4 temperature programmed desorption peak area occurs with an effective cross section of (2.0±0.1)×10−16 cm2. The same cross section characterizes the ejection of CCl (CCl+) during electron irradiation. After low electron fluences, C2 and C3 molecules desorb reflecting both electron-induced C–Cl bond dissociation and C–C bond formation. At 2.5 eV incident electron energy, the cross section is still high—10−17 cm2. Electron activation is attributed to a combination of impact ionization and electron attachment mechanisms.
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