Theory of the steady-state hole drift velocity in InGaAs

Abstract

We present calculations of the steady-state hole drift velocity in Ga0.47In0.53As as a function of applied electric field based on an ensemble Monte Carlo method. The calculation uses no adjustable parameters in the determination of the scattering rates and contains the full details of the valence-band structure derived using the k*p method. It is found that the calculated values match recent experimental values within 20% in the saturated regime. The calculations are made over the applied field range of 10–250 kV/cm.