Monte Carlo study of hole transport in silicon

Abstract

The steady state and transient drift velocity of holes in silicon have been investigated using Monte Carlo techniques. The valence band is modeled by warped nonparabolic heavy and light hole bands, and a spherical spin-orbit band. The nonparabolicity of the heavy and light hole bands is included using piecewise continuous functions. The calculated velocities are in better agreement with experimental steady state drift velocity values compared to previous Monte Carlo calculations using only a heavy hole band. Transient calculations show the magnitude of the velocity overshoot for holes is smaller than electrons in silicon but is significantly higher than the steady state drift velocity when high fields are applied.