Abstract
This work presents a theoretical analysis of direct transition in strain balanced SiGeSn/GeSn quantum well infrared photodetector. Eigen energies for Г valley conduction band, heavy hole band and light hole band are obtained from the self consistent solution of coupled Schrodinger and Poisson equations by finite difference method. Absorption spectra for direct transition of heavy hole and light hole band to Г valley are calculated after evaluating Eigen energies and wave functions. Significant absorption in infrared region is obtained for heavy hole band–Г valley conduction band transition. A significant shift in absorption peak towards longer wavelengths is observed in presence of electric field considering excitonic effect.
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