Abstract
In this work, quantum mechanical characteristic of strained and strain balanced SiGe/GeSn quantum wells is studied. Eigen energies for Г valley conduction band, heavy hole band and light hole band are obtained from the self consistent solution of coupled Schrodinger and Poisson equations by finite difference method for both strained and strain balanced quantum wells. A larger splitting of heavy hole band and light hole band in strain balanced quantum well is observed than that of strained quantum well.
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