Abstract
We report that high-quality InAsP/GaInP strain-balanced multiple quantum wells (MQWs) at 1.5 μm wavelength can be grown by gas-source molecular beam epitaxy. In order to obtain a large quantum-confined Stark effect, relatively thick (∼100 Å) InAs0.53P0.47 layers (lattice mismatch 1.8%) have been grown without strain relaxation. Our theoretical calculation shows that, while fulfilling the strain balance condition, the GaInP barriers should have a large thickness and small strain to reduce strain relaxation in these layers. Large Stark shift (32 meV at 180 kV/cm field) has been observed in a p-i-n diode structure with 20-period InAs0.53P0.47/Ga0.16In0.84P MQWs as the intrinsic region. The large change of absorption coefficient under electric field (∼3800 cm−1 at 80 kV/cm) indicates that this material is very promising for optical modulators near 1.5 μm.
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