Abstract
AbstractOn the basis of Read's dislocation model, a theory of the recombination of carriers in n‐type germanium is developed, including both the transient and steady state. The starting point for the present considerations is the assumption that the carrier capture cross‐sections are dependent on the charge density of the dislocation line, an idea similar to that given previously by Morrison. The theory deals mainly with temporary trapping of holes (a phenomenon which was observed recently in plastically deformed germanium) and yields good agreement with experiment.
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