Abstract
The stability of an isolated macrostep under a temperature gradient is discussed theoretically for the growth of III–V-semiconductors from a metallic solution, such as liquid phase epitaxy (LPE) and the travelling heater method (THM). To find the distribution of solute at the surface of one macrostep, the two-dimensional diffusion equation is solved, taking into account anisotropic interface kinetics as an important boundary condition. By analyzing the influence of growth rates and additional temperature gradients at the growth face it is found for the behavior of a macrostep, that for decreasing growth rates and for increasing temperature gradients the macrostep gets unstable and disappears. Details about the calculation and a comparison with experimental results from space grown crystals are presented.
Published Version
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