Abstract
This chapter provides a short synopsis of the topics covered in a book, to act as a stand-alone summary of the contents and as a navigational aid for the benefit of the reader. Four principal growth techniques currently in use for the growth of semiconductor single crystals from metallic solutions are introduced: liquid phase epitaxy (LPE), liquid phase electroepitaxy (LPEE), the traveling heater method (THM), and liquid phase diffusion (LPD). The chapter discusses the fundamental aspects of the solution crystal growth, and develops numerical simulation models for LPE, LPEE, THM, and LPD. Details on the finite element and finite difference methods can be found in a number of outstanding treatments of the literature, which are cited throughout the book, whenever necessary.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Single Crystal Growth of Semiconductors from Metallic Solutions
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
