Theoretical Relationship between Quencher Diffusion Constant and Image Quality in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

Abstract

Quenchers play an important role in the control of the acid catalytic chain reaction in chemically amplified resists, which is an indispensable technology in the high-volume production of semiconductor devices. In this study, the effects of quencher diffusion constants on the chemical gradient of latent images formed in chemically amplified resists were investigated assuming 16 nm line-and-space patterns. Although it has been reported that the chemical gradient of 22 nm line-and-space patterns was increased with quencher diffusion constant, it was found that the chemical gradient of 16 nm line-and-space patterns was increased with the decrease of quencher diffusion constant.