Abstract
A basic compound called a quencher plays an important role in the control of the acid catalytic chain reaction in chemically amplified resists used for the high-volume production of semiconductor devices. In this study, the effects of the effective reaction radius for the neutralization between acids and quenchers on the quality of latent images formed in chemically amplified resists were investigated assuming line-and-space patterns with a half-pitch of 16 nm. It was found that the efficiency of the termination of chain reactions strongly affects the performance (not only resolution but also sensitivity and line edge roughness) of a resist that utilizes the chemical amplification mechanism. The high performance of chemically amplified resists is linked to the high efficiency of acid-base neutralization.
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