Abstract
The resist materials are evaluated using their resolution, line edge roughness (LER), and sensitivity. However, the evaluation of chemically amplified resists is tricky because of the trade-off relationships between resolution, LER, and sensitivity. In this study, we investigated a chemically amplified resist with a fullerene matrix by analyzing the dose-pitch matrices of line width and LER. The effective quencher concentration of the fullerene resist obtained by the analysis was higher than those of typical polymer-type resists. This suggests that the quantum efficiency of acid generation in the fullerene matrix is slightly lower than those of polymer-type resists. The effective reaction radius was 0.06 nm, which was smaller than those of polymer-type resists. The proportionality constant between LER and the chemical gradient of the fullerene resist was smaller than those of polymer-type resists, probably owing to its molecular size.
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