Abstract
The purpose of extreme ultraviolet (EUV) lithography is to make pattern size of sub-22 nm. However, there are still some challenges to be overcome for EUV photoresist such as reducing the line edge roughness (LER) and line width roughness. The roughness of conventional polymer resists is large because of large polymer size. Thus many new molecular resists are studied and being developed in order to reduce roughness. To reduce LER we analyzed the size and structure of each ingredient of the suggested molecular resists. The varied parameters are the amount of photo acid generator, quencher and the size of the monomer. The protecting ratio of resin and protected number of a molecule are also varied. Monte-Carlo simulation is used for ingredient dispersion and acid diffusion direction to see the effect to LER. Solid-EUV is used to get the aerial image and photo generated acid for 22 nm node and ChemOffice is used to analyze molecular structure and volume.
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