Abstract
AbstractRecent experiments on the two‐dimensional electron gas in various semiconductor structures have revealed the existence of what appears to be a continuous low‐temperature metal‐insulator transition as the electron density is varied, although it was previously commonly accepted that all electronic states will be localized in a two‐dimensional disordered medium. Theoretical proposals for the explanation of various aspects of the experiments will be reviewed and implications for the scaling theory of localization will be discussed.
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