Metal–insulator transition in 2D: resistance in the critical region

Abstract

The goal of this paper is to highlight several issues which are most crucial for the understanding of the “metal–insulator transition” in two dimensions. We discuss some common problems in interpreting experimental results on high-mobility Si MOSFETs. We analyze concepts and methods used to determine the critical density of electrons at the metal–insulator transition. In particular, we discuss the origin of the temperature dependence of the resistivity and reasons for this dependence to flatten out at some electron density in the vicinity of the metal–insulator transition. This flattening has recently been proposed to indicate a true quantum phase transition. We suggest an alternative interpretation of this result and demonstrate the consistency of our proposition with the experimental data. One of the main questions, which arise in connection with the transition, is whether or not the metallic state is qualitatively distinct from a conventional disordered Fermi liquid. We analyze the arguments in favor of both affirmative and negative answers to this question and conclude that the experimental results accumulated up-to-date do not provide convincing evidence for the new state of matter characterized by a metallic-like residual conductivity. We also discuss in details the measurement and control of the electron temperature; these issues are crucial for interpreting the low-temperature experimental data.