Abstract
Particle deposition models applicable to low pressure were developed by incorporating known pressure dependencies into well established atmospheric deposition models. Contributions by various particle deposition mechanisms such as sedimentation, diffusion, and other external forces are accounted for in the particle deposition model. Particle deposition experiments were conducted at both the University of Duisburg (UD) and the Research Triangle Institute (RTI). Each organization used its own customized vacuum chamber and differing methods of particle generation and detection. Results from both experimental setups are compared with the deposition models to assess the capability of the models in describing particle deposition in semiconductor vacuum processing equipments.
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